2SA1832 features high voltage and high curren :v ceo =-50v,i c =-150ma(max.) excellent hfe linearity : hfe (i c =-0.1ma/ hfe(i c =-2ma)=0.95(typ.) high hfe: hfe=70 to 400 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -30 ma collector power dissipation p c 100 mw jumction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb =-5v,i e =0 -0.1 a emitter cutoff current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-6v,i c = -2ma 70 400 collector-emitter saturation voltage v ce(sat) i c = -100ma , i b = -10ma -0.1 -0.3 v collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 4 7 pf transition frequency f t v ce =-10v,i c =-1ma 80 mhz h fe classification marking sq sy sg rank q y gr hfe 70 140 120 240 200 400 sot-523 unit: mm 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 1.6 +0.15 -0.15 0.3 +0.25 -0.05 0.5 +0.1 -0.1 0.75 +0.05 -0.05 0.8 +0.05 -0.05 0.1 +0.01 -0.01 0.8 +0.1 -0.1 0.35 0.55 1 2 3 1. base 2. emitter 3. collecter smd type ic smd type transistors product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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